收藏本站
Ordering number : ENA1430B
ECH8310
P-Channel Power MOSFET
–30V, –9A, 17m ? , Single ECH8
Features
http://onsemi.com
?
?
?
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
--30
±20
--9
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
--60
1.5
150
--55 to +150
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-002
? Package
? JEITA, JEDEC
: ECH8
: -
? Minimum Packing Quantity : 3,000 pcs./reel
8
Top View
2.9
5
0.15
ECH8310-TL-H
0 to 0.02
Packing Type : TL
Marking
JM
Lot No.
TL
1
4
0.65
0.3
Electrical Connection
1 : Source
8
7
6
5
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
ECH8
1
2
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ECH8315-TL-H MOSFET P-CH 30V 7.5A ECH8
ECH8410-TL-H MOSFET N-CH 30V 12A ECH8
ECH8419-TL-H MOSFET N-CH 35V 9A ECH8
ECH8420-TL-H MOSFET N-CH 20V 14A ECH8
ECH8601M-TL-H MOSFET N-CH 24V 8A ECH8
ECH8602M-TL-H MOSFET N-CH 30V 6A ECH8
ECH8649-TL-H MOSFET N-CH DUAL 20V 7.5A ECH8
ECH8651R-TL-HX MOSFET N-CH DUAL 24V 10A ECH8
相关代理商/技术参数
ECH8315 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8315-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8320 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8320_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ECH8320-TL-H 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
ECH8401 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
ECH8401-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 20V 10A ECH8
ECH8402 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications